All MOSFET. NTH4L020N120SC1 Datasheet

 

NTH4L020N120SC1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTH4L020N120SC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 510 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 102 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 220 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247-4L

 NTH4L020N120SC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTH4L020N120SC1 Datasheet (PDF)

 0.1. Size:369K  onsemi
 nth4l020n120sc1.pdf

NTH4L020N120SC1 NTH4L020N120SC1

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 20 mW, 102 ANTH4L020N120SC1Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 28 mW @ 20 V 102 A TJ = 175C This Device is Pb-Free and is RoHS Complian

 7.1. Size:525K  onsemi
 nth4l027n65s3f.pdf

NTH4L020N120SC1 NTH4L020N120SC1

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 75 A, 27.4 mWNTH4L027N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

 8.1. Size:363K  onsemi
 nth4l040n120sc1.pdf

NTH4L020N120SC1 NTH4L020N120SC1

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 40 mW, 58 ANTH4L040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 56 mW @ 20 V 58 A TJ = 175C This Device is Pb-Free and is RoHS Compliant

 8.2. Size:410K  onsemi
 nth4l080n120sc1.pdf

NTH4L020N120SC1 NTH4L020N120SC1

MOSFET Power,N-Channel, Silicon Carbide,TO-247-4L1200 V, 80 mWNTH4L080N120SC1www.onsemi.comDescriptionSilicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilityVDSS RDS(ON) TYP ID MAXcompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Co

 8.3. Size:965K  onsemi
 nth4l040n65s3f.pdf

NTH4L020N120SC1 NTH4L020N120SC1

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 65 A, 40 mWNTH4L040N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTHD4102P

 

 
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