NTH4L020N120SC1 Datasheet. Specs and Replacement

Type Designator: NTH4L020N120SC1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 510 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 102 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 258 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247-4L

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NTH4L020N120SC1 datasheet

 0.1. Size:369K  onsemi
 nth4l020n120sc1.pdf pdf_icon

NTH4L020N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 20 mW, 102 A NTH4L020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 28 mW @ 20 V 102 A TJ = 175 C This Device is Pb-Free and is RoHS Complian... See More ⇒

 7.1. Size:525K  onsemi
 nth4l027n65s3f.pdf pdf_icon

NTH4L020N120SC1

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored... See More ⇒

 8.1. Size:363K  onsemi
 nth4l040n120sc1.pdf pdf_icon

NTH4L020N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 40 mW, 58 A NTH4L040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 56 mW @ 20 V 58 A TJ = 175 C This Device is Pb-Free and is RoHS Compliant... See More ⇒

 8.2. Size:410K  onsemi
 nth4l080n120sc1.pdf pdf_icon

NTH4L020N120SC1

MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 mW NTH4L080N120SC1 www.onsemi.com Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability VDSS RDS(ON) TYP ID MAX compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co... See More ⇒

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Detailed specifications: NTBS9D0N10MC, NTBV5605, NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, IRF540N, NTH4L027N65S3F, NTH4L040N120SC1, NTH4L040N65S3F, NTH4L080N120SC1, NTH4L160N120SC1, NTHD4P02F, NTHL020N090SC1, NTHL020N120SC1

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