NTH4L020N120SC1 - описание и поиск аналогов

 0.1. Size:369K  onsemi
 nth4l020n120sc1.pdf 

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 20 mW, 102 A NTH4L020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 28 mW @ 20 V 102 A TJ = 175 C This Device is Pb-Free and is RoHS Complian

 7.1. Size:525K  onsemi
 nth4l027n65s3f.pdf 

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

 8.1. Size:363K  onsemi
 nth4l040n120sc1.pdf 

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 40 mW, 58 A NTH4L040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 56 mW @ 20 V 58 A TJ = 175 C This Device is Pb-Free and is RoHS Compliant

 8.2. Size:410K  onsemi
 nth4l080n120sc1.pdf 

MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 mW NTH4L080N120SC1 www.onsemi.com Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability VDSS RDS(ON) TYP ID MAX compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co

 8.3. Size:965K  onsemi
 nth4l040n65s3f.pdf 

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NTH4L040N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON)