All MOSFET. NTHL040N65S3HF Datasheet

 

NTHL040N65S3HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTHL040N65S3HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 159 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-247

 NTHL040N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTHL040N65S3HF Datasheet (PDF)

 ..1. Size:399K  onsemi
 nthl040n65s3hf.pdf

NTHL040N65S3HF NTHL040N65S3HF

NTHL040N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to

 2.1. Size:510K  onsemi
 nthl040n65s3f.pdf

NTHL040N65S3HF NTHL040N65S3HF

NTHL040N65S3FMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advanced

 2.2. Size:266K  inchange semiconductor
 nthl040n65s3f.pdf

NTHL040N65S3HF NTHL040N65S3HF

isc N-Channel MOSFET Transistor NTHL040N65S3FFEATURESWith TO-247 packagingLow R

 6.1. Size:312K  onsemi
 nthl040n120sc1.pdf

NTHL040N65S3HF NTHL040N65S3HF

MOSFET - SiC Power, SingleN-Channel1200 V, 40 mW, 60 ANTHL040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 106 nC) Low Effective Output Capacitance (typ. Coss = 140 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested These Devices are RoHS Compliant 1200 V 56 mW @ 20 V 60 ATypical Applications UPSN-CHANNEL MOSFE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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