NTHL110N65S3F MOSFET. Datasheet pdf. Equivalent
Type Designator: NTHL110N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-247
NTHL110N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTHL110N65S3F Datasheet (PDF)
nthl110n65s3f.pdf
NTHL110N65S3FMOSFET Power, N-Channel,SUPERFET III, FRFET650 V, 30 A, 110 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(on) MAX ID MAXcharge performance. This advanced technology is tailored to
nthl190n65s3hf.pdf
MOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 20 A, 190 mWNTHL190N65S3HFwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(on) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 190 m @ 10 V 20 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advan
nthl160n120sc1.pdf
MOSFET - SiC Power, SingleN-Channel1200 V, 160 mW, 17 ANTHL160N120SC1Features Typ. RDS(on) = 160 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 34 nC) Low Effective Output Capacitance (Coss = 50 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested1200 V 224 mW @ 20 V 17 A These Devices are RoHS CompliantTypical ApplicationsN-CHANNEL MOSFET UPSD
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OSG55R074HSZF
