All MOSFET. STP5NA60 Datasheet

 

STP5NA60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP5NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220

 STP5NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP5NA60 Datasheet (PDF)

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 stp5na60.pdf

STP5NA60 STP5NA60

STP5NA60STP5NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA60 600 V

 8.1. Size:404K  st
 stp5na50.pdf

STP5NA60 STP5NA60

STP5NA50STP5NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA50 500 V

 8.2. Size:393K  st
 stp5na80.pdf

STP5NA60 STP5NA60

STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA80 800 V

 8.3. Size:96K  st
 stp5na80fp.pdf

STP5NA60 STP5NA60

STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V

 8.4. Size:50K  st
 stp5na80--.pdf

STP5NA60 STP5NA60

STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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