All MOSFET. STP5NA60 Datasheet

 

STP5NA60 Datasheet and Replacement


   Type Designator: STP5NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220
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STP5NA60 Datasheet (PDF)

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STP5NA60

STP5NA60STP5NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA60 600 V

 8.1. Size:404K  st
 stp5na50.pdf pdf_icon

STP5NA60

STP5NA50STP5NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA50 500 V

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STP5NA60

STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA80 800 V

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STP5NA60

STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V

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History: CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | TK7P65W | SFFX054Z

Keywords - STP5NA60 MOSFET datasheet

 STP5NA60 cross reference
 STP5NA60 equivalent finder
 STP5NA60 lookup
 STP5NA60 substitution
 STP5NA60 replacement

 

 
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