NTMFS4833NA Specs and Replacement

Type Designator: NTMFS4833NA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 191 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: SO-8FL

NTMFS4833NA substitution

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NTMFS4833NA datasheet

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NTMFS4833NA

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NTMFS4833NA

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 2.0 mW @ 10 V 30 V 191 A CPU Po... See More ⇒

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NTMFS4833NA

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m... See More ⇒

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NTMFS4833NA

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V 30 V 191 A ... See More ⇒

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Detailed specifications: NTMFS024N06C, NTMFS08N003C, NTMFS0D55N03CG, NTMFS0D8N02P1E, NTMFS0D9N03CG, NTMFS1D15N03CG, NTMFS23D9N06HL, NTMFS3D6N10MCL, RFP50N06, NTMFS4837NH, NTMFS4845N, NTMFS4897NF, NTMFS4899NF, NTMFS4927NC, NTMFS4936NC, NTMFS4C020N, NTMFS4C022N

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