STP5NA80 Specs and Replacement
Type Designator: STP5NA80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220
STP5NA80 substitution
- MOSFET ⓘ Cross-Reference Search
STP5NA80 datasheet
stp5na80.pdf
STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA80 800 V ... See More ⇒
stp5na80fp.pdf
STP5NA80FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP5NA80FP 800 V ... See More ⇒
stp5na80--.pdf
STP5NA80FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP5NA80FP 800 V ... See More ⇒
stp5na50.pdf
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 500 V ... See More ⇒
Detailed specifications: STP5N80FI , STP5N80XI , STP5N90 , STP5N90FI , STP5NA50 , STP5NA50FI , STP5NA60 , STP5NA60FI , IRFP260 , STP5NA80FI , STP60N05 , STP60N05-16 , STP60N05FI , STP60N06 , STP60N06-16 , STP60N06FI , STP6N25 .
Keywords - STP5NA80 MOSFET specs
STP5NA80 cross reference
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