All MOSFET. NTMTS0D7N06C Datasheet

 

NTMTS0D7N06C MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMTS0D7N06C
   Marking Code: 0D7N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 294.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 464 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25.7 nC
   trⓘ - Rise Time: 29.3 nS
   Cossⓘ - Output Capacitance: 8010 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00072 Ohm
   Package: DFNW8

 NTMTS0D7N06C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMTS0D7N06C Datasheet (PDF)

 ..1. Size:399K  onsemi
 ntmts0d7n06c.pdf

NTMTS0D7N06C NTMTS0D7N06C

MOSFET - Power, SingleN-Channel, DFNW860 V, 0.72 mW, 464 ANTMTS0D7N06CFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 0.72 mW @ 10 V 464 ATypical A

 0.1. Size:398K  onsemi
 ntmts0d7n06cl.pdf

NTMTS0D7N06C NTMTS0D7N06C

MOSFET - Power, SingleN-Channel60 V, 0.68 mW, 477 ANTMTS0D7N06CLFeatureswww.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Power 88 Package, Industry Standard0.68 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are Ro

 7.1. Size:241K  onsemi
 ntmts0d6n04c.pdf

NTMTS0D7N06C NTMTS0D7N06C

NTMTS0D6N04CPower MOSFET40 V, 0.48 mW, 533 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications40 V 0.48 mW @ 10 V 533

 7.2. Size:252K  onsemi
 ntmts0d6n04cl.pdf

NTMTS0D7N06C NTMTS0D7N06C

NTMTS0D6N04CLPower MOSFET40 V, 0.42 mW, 554.5 A, Single N-ChannelFeatures Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXTypical Applications0.42 mW @ 10 V40 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK465-100A

 

 
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