All MOSFET. NTMYS4D1N06CL Datasheet

 

NTMYS4D1N06CL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMYS4D1N06CL
   Marking Code: 4D1N06CL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: LFPAK4

 NTMYS4D1N06CL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMYS4D1N06CL Datasheet (PDF)

 ..1. Size:326K  onsemi
 ntmys4d1n06cl.pdf

NTMYS4D1N06CL NTMYS4D1N06CL

MOSFET Power, Single,N-Channel60 V, 4.0 mW, 100 ANTMYS4D1N06CLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard4.0 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant60 V100

 9.1. Size:336K  onsemi
 ntmys1d2n04cl.pdf

NTMYS4D1N06CL NTMYS4D1N06CL

NTMYS1D2N04CLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 258 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard1.1 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant40 V 258 A

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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