All MOSFET. STP60N06-16 Datasheet

 

STP60N06-16 Datasheet and Replacement


   Type Designator: STP60N06-16
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
 

 STP60N06-16 substitution

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STP60N06-16 Datasheet (PDF)

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STP60N06-16

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STP60N06-16

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

 4.2. Size:228K  inchange semiconductor
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STP60N06-16

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25

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STP60N06-16

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

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Keywords - STP60N06-16 MOSFET datasheet

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