STP60N06-16 MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

STP60N06-16 Specs and Replacement

Type Designator: STP60N06-16

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 370 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

STP60N06-16 substitution

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STP60N06-16 datasheet

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STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V ... See More ⇒

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60N06-14 FEATURES With low gate drive requirements Easy to drive High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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