All MOSFET. NTNS5K0P021Z Datasheet

 

NTNS5K0P021Z Datasheet and Replacement


   Type Designator: NTNS5K0P021Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.127 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 2.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: XDFN3
 

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NTNS5K0P021Z Datasheet (PDF)

 ..1. Size:170K  onsemi
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NTNS5K0P021Z

NTNS5K0P021ZMOSFET SingleP-Channel, Small Signal,XDFN3,0.62 x 0.42 x 0.4 mmwww.onsemi.com-20 V, -127 mAFeaturesV(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm)5.0 W @ -4.5 Vfor Extremely Space-Constrained Applications5.5 W @ -3.3 V -1.5 V Gate Drive-20 V 6.0 W @ -2.5 V -127 mA These Devices are Pb-Free, Halogen

Datasheet: NTMTS0D6N04C , NTMTS0D6N04CL , NTMTS0D7N06C , NTMTS0D7N06CL , NTMYS1D2N04CL , NTMYS4D1N06CL , NTND31225CZ , NTNS1K5N021Z , IRFB3607 , NTP055N65S3H , NTP095N65S3HF , NTP110N65S3HF , NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z , NTP5862N , NTP5D0N15MC .

History: IPW60R045CPA | CEB10N4

Keywords - NTNS5K0P021Z MOSFET datasheet

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