NTNS5K0P021Z PDF and Equivalents Search

 

NTNS5K0P021Z Specs and Replacement

Type Designator: NTNS5K0P021Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.127 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 2.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: XDFN3

NTNS5K0P021Z substitution

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NTNS5K0P021Z datasheet

 ..1. Size:170K  onsemi
 ntns5k0p021z.pdf pdf_icon

NTNS5K0P021Z

NTNS5K0P021Z MOSFET Single P-Channel, Small Signal, XDFN3, 0.62 x 0.42 x 0.4 mm www.onsemi.com -20 V, -127 mA Features V(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) 5.0 W @ -4.5 V for Extremely Space-Constrained Applications 5.5 W @ -3.3 V -1.5 V Gate Drive -20 V 6.0 W @ -2.5 V -127 mA These Devices are Pb-Free, Halogen ... See More ⇒

Detailed specifications: NTMTS0D6N04C , NTMTS0D6N04CL , NTMTS0D7N06C , NTMTS0D7N06CL , NTMYS1D2N04CL , NTMYS4D1N06CL , NTND31225CZ , NTNS1K5N021Z , K4145 , NTP055N65S3H , NTP095N65S3HF , NTP110N65S3HF , NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z , NTP5862N , NTP5D0N15MC .

History: IRFY044 | IRFWZ44A

Keywords - NTNS5K0P021Z MOSFET specs

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