All MOSFET. NTP150N65S3HF Datasheet

 

NTP150N65S3HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTP150N65S3HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220

 NTP150N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP150N65S3HF Datasheet (PDF)

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 ntp150n65s3hf.pdf

NTP150N65S3HF NTP150N65S3HF

NTP150N65S3HFMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 24 A, 150 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 150 mW @ 10 V 24 Acharge performance. This advance

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History: SJMN600R65B

 

 
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