All MOSFET. NTP190N65S3HF Datasheet

 

NTP190N65S3HF Datasheet and Replacement


   Type Designator: NTP190N65S3HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

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NTP190N65S3HF Datasheet (PDF)

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NTP190N65S3HF

MOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 20 A, 190 mWNTP190N65S3HFwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 20 Acharge performance. This advance

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History: IPP65R150CFDA | TSP65R190S2

Keywords - NTP190N65S3HF MOSFET datasheet

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