NTP190N65S3HF Specs and Replacement

Type Designator: NTP190N65S3HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

NTP190N65S3HF substitution

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NTP190N65S3HF datasheet

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 ntp190n65s3hf.pdf pdf_icon

NTP190N65S3HF

MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTP190N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 20 A charge performance. This advance... See More ⇒

Detailed specifications: NTMYS4D1N06CL, NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, IRF1010E, NTP360N80S3Z, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ

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