NTP190N65S3HF MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP190N65S3HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
NTP190N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP190N65S3HF Datasheet (PDF)
ntp190n65s3hf.pdf
MOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 20 A, 190 mWNTP190N65S3HFwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 20 Acharge performance. This advance
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