All MOSFET. STP60N06FI Datasheet

 

STP60N06FI Datasheet and Replacement


   Type Designator: STP60N06FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 68 nC
   tr ⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: ISOWATT220
 

 STP60N06FI substitution

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STP60N06FI Datasheet (PDF)

 ..1. Size:342K  st
 stp60n06 stp60n06fi.pdf pdf_icon

STP60N06FI

 6.1. Size:77K  st
 stp60n05 stp60n06.pdf pdf_icon

STP60N06FI

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

 6.2. Size:54K  st
 stp60n05-14 stp60n06-14.pdf pdf_icon

STP60N06FI

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

 6.3. Size:354K  st
 stp60n05-16 stp60n06-16.pdf pdf_icon

STP60N06FI

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Datasheet: STP5NA60FI , STP5NA80 , STP5NA80FI , STP60N05 , STP60N05-16 , STP60N05FI , STP60N06 , STP60N06-16 , 4N60 , STP6N25 , STP6N25FI , STP6N50 , STP6N50FI , STP6N60FI , STP6NA50 , STP6NA50FI , STP6NA60 .

Keywords - STP60N06FI MOSFET datasheet

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