All MOSFET. NTTFS005N04C Datasheet

 

NTTFS005N04C Datasheet and Replacement


   Type Designator: NTTFS005N04C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: WDFN8
 

 NTTFS005N04C substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTTFS005N04C Datasheet (PDF)

 ..1. Size:193K  onsemi
nttfs005n04c.pdf pdf_icon

NTTFS005N04C

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val

 7.1. Size:205K  onsemi
nttfs004n04c.pdf pdf_icon

NTTFS005N04C

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis

 7.2. Size:188K  onsemi
nttfs008n04c.pdf pdf_icon

NTTFS005N04C

NTTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(on) MAX ID MAXParameter Symbol Val

 7.3. Size:196K  onsemi
nttfs003n04c.pdf pdf_icon

NTTFS005N04C

NTTFS003N04CMOSFET Power, Single,N-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 3.5 mW @ 10 V 103 AMAXIMUM RATINGS (TJ = 25C unless otherw

Datasheet: NTPF190N65S3HF , NTPF360N80S3Z , NTR3A052PZ , NTR3C21NZ , NTTFS002N04C , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , P0903BDG , NTTFS008N04C , NTTFS010N10MCL , NTTFS015N04C , NTTFS015P03P8Z , NTTFS016N06C , NTTFS020N06C , NTTFS024N06C , NTTFS030N06C .

History: IRF7331PBF-1 | STB20NM50-1 | TMAN20N50 | SWD2N60DC | NTTFS4C10NTAG | JSM2302 | SFQ230N100

Keywords - NTTFS005N04C MOSFET datasheet

 NTTFS005N04C cross reference
 NTTFS005N04C equivalent finder
 NTTFS005N04C lookup
 NTTFS005N04C substitution
 NTTFS005N04C replacement

 

 
Back to Top

 


 
.