NTTFS005N04C. Аналоги и основные параметры
Наименование производителя: NTTFS005N04C
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 69 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 530 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NTTFS005N04C
- подборⓘ MOSFET транзистора по параметрам
NTTFS005N04C даташит
nttfs005n04c.pdf
NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val
nttfs004n04c.pdf
NTTFS004N04C MOSFET Power, Single, N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 4.9 mW @ 10 V 77 A MAXIMUM RATINGS (TJ = 25 C unless otherwis
nttfs008n04c.pdf
NTTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(on) MAX ID MAX Parameter Symbol Val
nttfs003n04c.pdf
NTTFS003N04C MOSFET Power, Single, N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 3.5 mW @ 10 V 103 A MAXIMUM RATINGS (TJ = 25 C unless otherw
Другие IGBT... NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ, NTTFS002N04C, NTTFS002N04CL, NTTFS003N04C, NTTFS004N04C, IRF1407, NTTFS008N04C, NTTFS010N10MCL, NTTFS015N04C, NTTFS015P03P8Z, NTTFS016N06C, NTTFS020N06C, NTTFS024N06C, NTTFS030N06C
History: CEDM7001
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