NTTFS005N04C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTTFS005N04C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 69 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 530 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NTTFS005N04C
NTTFS005N04C Datasheet (PDF)
nttfs005n04c.pdf

NTTFS005N04CPower MOSFET40 V, 5.6 mW, 69 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Val
nttfs004n04c.pdf

NTTFS004N04CMOSFET Power, Single,N-Channel40 V, 4.9 mW, 77 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 4.9 mW @ 10 V 77 AMAXIMUM RATINGS (TJ = 25C unless otherwis
nttfs008n04c.pdf

NTTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(on) MAX ID MAXParameter Symbol Val
nttfs003n04c.pdf

NTTFS003N04CMOSFET Power, Single,N-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 3.5 mW @ 10 V 103 AMAXIMUM RATINGS (TJ = 25C unless otherw
Другие MOSFET... NTPF190N65S3HF , NTPF360N80S3Z , NTR3A052PZ , NTR3C21NZ , NTTFS002N04C , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , P0903BDG , NTTFS008N04C , NTTFS010N10MCL , NTTFS015N04C , NTTFS015P03P8Z , NTTFS016N06C , NTTFS020N06C , NTTFS024N06C , NTTFS030N06C .
History: RU4090L | SWD050R95E8S
History: RU4090L | SWD050R95E8S



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