NTTFS6H850N Specs and Replacement

Type Designator: NTTFS6H850N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: WDFN8

NTTFS6H850N substitution

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NTTFS6H850N datasheet

 ..1. Size:196K  onsemi
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NTTFS6H850N

NTTFS6H850N MOSFET Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 80 V 9.5 mW @ 10 V 68 A MAXIMUM RATINGS (TJ = 25 C unless otherwise... See More ⇒

 0.1. Size:185K  onsemi
nttfs6h850nl.pdf pdf_icon

NTTFS6H850N

NTTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 8.6 mW @ 10 V Param... See More ⇒

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NTTFS6H850N

MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NTTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 13.4 mW @ 10 V ... See More ⇒

 6.1. Size:197K  onsemi
nttfs6h860nl.pdf pdf_icon

NTTFS6H850N

MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 20 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V ... See More ⇒

Detailed specifications: NTTFS5C471NL, NTTFS5C478NL, NTTFS5C658NL, NTTFS5C670NL, NTTFS5C673NL, NTTFS5C680NL, NTTFS5CS70NL, NTTFS5D1N06HL, IRF830, NTTFS6H850NL, NTTFS6H854NL, NTTFS6H860NL, NTTFS6H880NL, NTTFS8D1N08H, NTUD3174NZ, NTZD3158P, NVATS4A103PZ

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