All MOSFET. NTTFS6H850N Datasheet

 

NTTFS6H850N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTTFS6H850N
   Marking Code: 850N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: WDFN8

 NTTFS6H850N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTTFS6H850N Datasheet (PDF)

 ..1. Size:196K  onsemi
 nttfs6h850n.pdf

NTTFS6H850N NTTFS6H850N

NTTFS6H850NMOSFET Power, Single,N-Channel80 V, 9.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX80 V 9.5 mW @ 10 V 68 AMAXIMUM RATINGS (TJ = 25C unless otherwise

 0.1. Size:185K  onsemi
 nttfs6h850nl.pdf

NTTFS6H850N NTTFS6H850N

NTTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)8.6 mW @ 10 VParam

 5.1. Size:201K  onsemi
 nttfs6h854nl.pdf

NTTFS6H850N NTTFS6H850N

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANTTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)13.4 mW @ 10 V

 6.1. Size:197K  onsemi
 nttfs6h860nl.pdf

NTTFS6H850N NTTFS6H850N

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANTTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant20 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V

 6.2. Size:197K  onsemi
 nttfs6h880nl.pdf

NTTFS6H850N NTTFS6H850N

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant29 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

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