NTTFS6H850N - аналоги, параметры транзистора - Справочник транзисторов

NTTFS6H850N технические параметры

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NTTFS6H850N MOSFET Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 80 V 9.5 mW @ 10 V 68 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

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NTTFS6H850NL Power MOSFET 80 V, 8.6 mW, 64 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 8.6 mW @ 10 V Param

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MOSFET - Power, Single N-Channel 80 V, 13.4 mW, 41 A NTTFS6H854NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 13.4 mW @ 10 V

6.1. Size:197K onsemi
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MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NTTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 20 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V