STP6N50FI Datasheet. Specs and Replacement
Type Designator: STP6N50FI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: ISOWATT220
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STP6N50FI datasheet
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP6NK60Z DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications in switching power supplies and... See More ⇒
9.45. Size:207K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP6NK90Z FEATURES Typical R (on)=1.56 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideal for off-line powersupplies adaptors and PFC Lighting High current high speed switching AB... See More ⇒
9.47. Size:202K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP6NK90ZFP FEATURES Typical R (on)=1.56 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideal for off-line powersupplies adaptors and PFC Lighting High current high speed switching ... See More ⇒
Detailed specifications: STP60N05-16, STP60N05FI, STP60N06, STP60N06-16, STP60N06FI, STP6N25, STP6N25FI, STP6N50, AON6380, STP6N60FI, STP6NA50, STP6NA50FI, STP6NA60, STP6NA60FI, STP6NA80, STP6NA80FI, STP7N20
Keywords - STP6N50FI MOSFET specs
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