SI4260 Specs and Replacement

Type Designator: SI4260

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO8L SOP8

SI4260 substitution

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SI4260 datasheet

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SI4260

SOP8 Plastic-Encapsulate MOSFETS SI4260 N-Channel Power MOSFET SI4260 SO-8L D D PRODUCT SUMMARY D D VDSS ID RDS(on) (m-ohm) Max 6.0 @ VGS = 10V G 60V G 20A S 7.0 @ VGS = 4.5V S S S S SO-8 S Pin 1 Equivalent Cir cuit General Features D Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 C operating temperature G ... See More ⇒

Detailed specifications: SI12N60-F, SI12N60, SI20N03, SI25N10, SI3400, SI3401, SI3403, SI3406, IRFP460, SI4430, SI4614, SI4953, SI4N60-TA3-T, SI4N60-TF3-T, SI4N60-TM3-T, SI4N60-TN3-R, SI4N60-TN3-T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.