All MOSFET. SI4260 Datasheet

 

SI4260 Datasheet and Replacement


   Type Designator: SI4260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SO8L SOP8
 

 SI4260 substitution

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SI4260 Datasheet (PDF)

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SI4260

SOP8 Plastic-Encapsulate MOSFETSSI4260N-Channel Power MOSFET SI4260SO-8LDDPRODUCT SUMMARYDDVDSSID RDS(on) (m-ohm) Max 6.0 @ VGS = 10V G60V G20A S7.0 @ VGS = 4.5V S SSSSO-8 SPin 1Equivalent Cir cuitGeneral Features D Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 C operating temperature G

Datasheet: SI12N60-F , SI12N60 , SI20N03 , SI25N10 , SI3400 , SI3401 , SI3403 , SI3406 , IRF640 , SI4430 , SI4614 , SI4953 , SI4N60-TA3-T , SI4N60-TF3-T , SI4N60-TM3-T , SI4N60-TN3-R , SI4N60-TN3-T .

History: FQAF17N40 | NCE4801 | STP150N10F7 | SQR50N06-07L | SSM9435GM | FDC699PF077 | WMO13P10TS

Keywords - SI4260 MOSFET datasheet

 SI4260 cross reference
 SI4260 equivalent finder
 SI4260 lookup
 SI4260 substitution
 SI4260 replacement

 

 
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