SI5N60-TA3-T Datasheet and Replacement
Type Designator: SI5N60-TA3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
SI5N60-TA3-T substitution
SI5N60-TA3-T Datasheet (PDF)
si5n60.pdf

N-CHANNEL MOSFETSI5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SI5N60 is a high voltage MOSFET and is designed to have better characteristics ,such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This
Datasheet: SI4N60-TN3-T , SI4N60L-TA3-T , SI4N60L-TF3-T , SI4N60L-TM3-T , SI4N60L-TN3-R , SI4N60L-TN3-T , SI4N65 , SI4N65F , 2SK3878 , SI5N60-TF3-T , SI5N60-TM3-T , SI5N60-TN3-R , SI5N60-TN3-T , SI5N60L-TA3-T , SI5N60L-TF3-T , SI5N60L-TM3-T , SI5N60L-TN3-R .
History: IPN80R900P7
Keywords - SI5N60-TA3-T MOSFET datasheet
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SI5N60-TA3-T equivalent finder
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SI5N60-TA3-T substitution
SI5N60-TA3-T replacement
History: IPN80R900P7



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