SI5N60-TM3-T Specs and Replacement

Type Designator: SI5N60-TM3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO251

SI5N60-TM3-T substitution

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SI5N60-TM3-T datasheet

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SI5N60-TM3-T

N-CHANNEL MOSFET SI5N60 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SI5N60 is a high voltage MOSFET and is designed to have better characteristics , such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This ... See More ⇒

Detailed specifications: SI4N60L-TF3-T, SI4N60L-TM3-T, SI4N60L-TN3-R, SI4N60L-TN3-T, SI4N65, SI4N65F, SI5N60-TA3-T, SI5N60-TF3-T, IRFP250N, SI5N60-TN3-R, SI5N60-TN3-T, SI5N60L-TA3-T, SI5N60L-TF3-T, SI5N60L-TM3-T, SI5N60L-TN3-R, SI5N60L-TN3-T, SI60N03

Keywords - SI5N60-TM3-T MOSFET specs

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