All MOSFET. SI5N60-TM3-T Datasheet

 

SI5N60-TM3-T Datasheet and Replacement


   Type Designator: SI5N60-TM3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251
 

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SI5N60-TM3-T Datasheet (PDF)

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SI5N60-TM3-T

N-CHANNEL MOSFETSI5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SI5N60 is a high voltage MOSFET and is designed to have better characteristics ,such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This

Datasheet: SI4N60L-TF3-T , SI4N60L-TM3-T , SI4N60L-TN3-R , SI4N60L-TN3-T , SI4N65 , SI4N65F , SI5N60-TA3-T , SI5N60-TF3-T , AON7408 , SI5N60-TN3-R , SI5N60-TN3-T , SI5N60L-TA3-T , SI5N60L-TF3-T , SI5N60L-TM3-T , SI5N60L-TN3-R , SI5N60L-TN3-T , SI60N03 .

History: STH270N4F3-6 | RU30C8H | SRT10N047HC56TR-G | WSD14N10DNG | IRFB9N60APBF | NCE40H11K | ISCNH342P

Keywords - SI5N60-TM3-T MOSFET datasheet

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