SI8205A Specs and Replacement

Type Designator: SI8205A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT23-6

SI8205A substitution

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SI8205A datasheet

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SI8205A

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205A Dual N-Channel MOSFET SI8205A V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch ... See More ⇒

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 si8205s.pdf pdf_icon

SI8205A

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205S Dual N-Channel MOSFET SI8205S V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.025 @ 4.5V 20V 5.0A 0.033 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch ... See More ⇒

Detailed specifications: SI5N60L-TF3-T, SI5N60L-TM3-T, SI5N60L-TN3-R, SI5N60L-TN3-T, SI60N03, SI68H11, SI7N65, SI7N65F, IRFP260, SI8205S, SI9435, TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ

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