STP6NA80 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STP6NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220

STP6NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS