NVB082N65S3F MOSFET. Datasheet pdf. Equivalent
Type Designator: NVB082N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 81 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: D2PAK-3
NVB082N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVB082N65S3F Datasheet (PDF)
..1. Size:234K onsemi
nvb082n65s3f.pdf
nvb082n65s3f.pdf
MOSFET - Power, SingleN-Channel, D2PAK650 V, 82 mW, 40 ANVB082N65S3FDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX ID
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