NVB082N65S3F Specs and Replacement

Type Designator: NVB082N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: D2PAK-3

NVB082N65S3F substitution

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NVB082N65S3F datasheet

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NVB082N65S3F

MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 mW, 40 A NVB082N65S3F Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX ID... See More ⇒

Detailed specifications: NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ, NVB072N65S3, CS150N03A8, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1

Keywords - NVB082N65S3F MOSFET specs

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