All MOSFET. NVB082N65S3F Datasheet

 

NVB082N65S3F Datasheet and Replacement


   Type Designator: NVB082N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: D2PAK-3
      - MOSFET Cross-Reference Search

 

NVB082N65S3F Datasheet (PDF)

 ..1. Size:234K  onsemi
 nvb082n65s3f.pdf pdf_icon

NVB082N65S3F

MOSFET - Power, SingleN-Channel, D2PAK650 V, 82 mW, 40 ANVB082N65S3FDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX ID

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SI7143DP | WML11N80M3 | STP85N3LH5 | AP10N9R0I | FRE9260R | AOB160A60L | PSMN8R5-100ES

Keywords - NVB082N65S3F MOSFET datasheet

 NVB082N65S3F cross reference
 NVB082N65S3F equivalent finder
 NVB082N65S3F lookup
 NVB082N65S3F substitution
 NVB082N65S3F replacement

 

 
Back to Top

 


 
.