All MOSFET. NVB150N65S3F Datasheet

 

NVB150N65S3F MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVB150N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 40.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: D2PAK-3

 NVB150N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVB150N65S3F Datasheet (PDF)

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 nvb150n65s3f.pdf

NVB150N65S3F NVB150N65S3F

NVB150N65S3FMOSFET - Power650 V, 150 mW, 24 A, Single N-Channel,D2PAKDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX I

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY029N10P | BUZ74 | NCE65N1K2F | MCU04N65 | 4N70KG-TM3-T | GSM4953S

 

 
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