NVB150N65S3F Specs and Replacement

Type Designator: NVB150N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 40.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: D2PAK-3

NVB150N65S3F substitution

- MOSFET ⓘ Cross-Reference Search

 

NVB150N65S3F datasheet

 ..1. Size:240K  onsemi
 nvb150n65s3f.pdf pdf_icon

NVB150N65S3F

NVB150N65S3F MOSFET - Power 650 V, 150 mW, 24 A, Single N-Channel, D2PAK Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX I... See More ⇒

Detailed specifications: NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, AON7506, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC

Keywords - NVB150N65S3F MOSFET specs

 NVB150N65S3F cross reference

 NVB150N65S3F equivalent finder

 NVB150N65S3F pdf lookup

 NVB150N65S3F substitution

 NVB150N65S3F replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs