All MOSFET. NVB150N65S3F Datasheet

 

NVB150N65S3F Datasheet and Replacement


   Type Designator: NVB150N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 40.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: D2PAK-3
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NVB150N65S3F Datasheet (PDF)

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NVB150N65S3F

NVB150N65S3FMOSFET - Power650 V, 150 mW, 24 A, Single N-Channel,D2PAKDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX I

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History: PPJT7600 | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2

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