All MOSFET. NVB190N65S3F Datasheet

 

NVB190N65S3F MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVB190N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: D2PAK-3

 NVB190N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVB190N65S3F Datasheet (PDF)

 ..1. Size:251K  onsemi
 nvb190n65s3f.pdf

NVB190N65S3F NVB190N65S3F

NVB190N65S3FMOSFET - Power650 V, 190 mW, 20 A, SingleN-Channel, D2PAKDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeV(BR)DSS RDS(ON) MAX I

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BRCS150N12SRA

 

 
Back to Top