NVB190N65S3F Specs and Replacement

Type Designator: NVB190N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: D2PAK-3

NVB190N65S3F substitution

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NVB190N65S3F datasheet

 ..1. Size:251K  onsemi
 nvb190n65s3f.pdf pdf_icon

NVB190N65S3F

NVB190N65S3F MOSFET - Power 650 V, 190 mW, 20 A, Single N-Channel, D2PAK Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX I... See More ⇒

Detailed specifications: NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, STP80NF70, NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC, NVBGS6D5N15MC

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