NVBG060N090SC1 MOSFET. Datasheet pdf. Equivalent
Type Designator: NVBG060N090SC1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 211 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
Package: D2PAK-7L
NVBG060N090SC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVBG060N090SC1 Datasheet (PDF)
nvbg060n090sc1.pdf
MOSFET - SiC Power, SingleN-Channel, D2PAK-7L900 V, 60 mW, 44 ANVBG060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 18 V Typ. RDS(on) = 43 mW @ VGS = 18 Vwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 88 nC) High Speed Switching with Low Capacitance (Coss = 115 pF) 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX TJ = 175C900 V 84 mW @ 15 V 44 A
nvbg020n120sc1.pdf
MOSFET - Power, Silicon Carbide, Single N-ChannelD2PAK7L, 1200 V, 98 A, 20 mOhmNVBG020N120SC1Features Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 220 nC) Low Effective Output Capacitance (typ. Coss = 258 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 28 mW @ 20 V 98 A Qualified According to AEC-Q101 RoHS Compli
nvbg080n120sc1.pdf
MOSFET SiC Power, SingleN-Channel, D2PAK-7L1200 V, 80 mW, 30 ANVBG080N120SC1Featureswww.onsemi.com Typ. RDS(on) = 80 mW Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) Low Effective Output Capacitance (Typ. Coss = 79 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 110 mW @ 20 V 30 A Qualified According to AEC-Q101 This Device is Pb-Free an
nvbg040n120sc1.pdf
MOSFET SiC Power, SingleN-Channel, D2PAK-7L1200 V, 40 mW, 60 ANVBG040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) Low Effective Output Capacitance (Typ. Coss = 139 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested AEC-Q101 Qualified and PPAP Capable 1200 V 56 mW @ 20 V 60 A This Device is Pb-Fre
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