NVBG060N090SC1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: NVBG060N090SC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: D2PAK-7L

NVBG060N090SC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS