NVBGS4D1N15MC MOSFET. Datasheet pdf. Equivalent
Type Designator: NVBGS4D1N15MC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 316 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 185 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88.9 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 2025 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: D2PAK-7
NVBGS4D1N15MC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVBGS4D1N15MC Datasheet (PDF)
nvbgs4d1n15mc.pdf
MOSFET - Single N-Channel150 V, 4.1 mW, 185 ANVBGS4D1N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant4.1 mW @ 10 V150 V 185 A
nvbgs6d5n15mc.pdf
MOSFET - Power, SingleN-Channel, D2PAK7150 V, 7 mW, 121 ANVBGS6D5N15MCFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable150 V 7 mW @ 10 V 121 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
