NVBGS4D1N15MC Specs and Replacement

Type Designator: NVBGS4D1N15MC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 316 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 185 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 2025 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: D2PAK-7

NVBGS4D1N15MC substitution

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NVBGS4D1N15MC datasheet

 ..1. Size:293K  onsemi
 nvbgs4d1n15mc.pdf pdf_icon

NVBGS4D1N15MC

MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NVBGS4D1N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 4.1 mW @ 10 V 150 V 185 A... See More ⇒

 9.1. Size:404K  onsemi
 nvbgs6d5n15mc.pdf pdf_icon

NVBGS4D1N15MC

MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mW, 121 A NVBGS6D5N15MC Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 150 V 7 mW @ 10 V 121 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS... See More ⇒

Detailed specifications: NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, IRF1407, NVBGS6D5N15MC, NVBLS001N06C, NVBLS0D5N04M8, NVBLS0D7N04M8, NVBLS0D7N06C, NVBLS1D1N08H, NVBLS4D0N15MC, NVC3S5A51PLZ

Keywords - NVBGS4D1N15MC MOSFET specs

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