NVBGS6D5N15MC MOSFET. Datasheet pdf. Equivalent
Type Designator: NVBGS6D5N15MC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 238 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 121 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: D2PAK-7
NVBGS6D5N15MC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVBGS6D5N15MC Datasheet (PDF)
nvbgs6d5n15mc.pdf
MOSFET - Power, SingleN-Channel, D2PAK7150 V, 7 mW, 121 ANVBGS6D5N15MCFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable150 V 7 mW @ 10 V 121 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
nvbgs4d1n15mc.pdf
MOSFET - Single N-Channel150 V, 4.1 mW, 185 ANVBGS4D1N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant4.1 mW @ 10 V150 V 185 A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
