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NVBGS6D5N15MC Datasheet and Replacement


   Type Designator: NVBGS6D5N15MC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 238 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 121 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: D2PAK-7
 

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NVBGS6D5N15MC Datasheet (PDF)

 ..1. Size:404K  onsemi
 nvbgs6d5n15mc.pdf pdf_icon

NVBGS6D5N15MC

MOSFET - Power, SingleN-Channel, D2PAK7150 V, 7 mW, 121 ANVBGS6D5N15MCFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable150 V 7 mW @ 10 V 121 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 9.1. Size:293K  onsemi
 nvbgs4d1n15mc.pdf pdf_icon

NVBGS6D5N15MC

MOSFET - Single N-Channel150 V, 4.1 mW, 185 ANVBGS4D1N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant4.1 mW @ 10 V150 V 185 A

Datasheet: NVB190N65S3F , NVBF170L , NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , NVBG160N120SC1 , NVBGS4D1N15MC , 5N65 , NVBLS001N06C , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC , NVC3S5A51PLZ , NVD5C446N .

History: CEP6036 | MTW45N10E

Keywords - NVBGS6D5N15MC MOSFET datasheet

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