NVBLS001N06C Specs and Replacement

Type Designator: NVBLS001N06C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 284 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 422 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 5973 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm

Package: H-PSOF8L

NVBLS001N06C substitution

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NVBLS001N06C datasheet

 ..1. Size:394K  onsemi
 nvbls001n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ... See More ⇒

 8.1. Size:490K  onsemi
 nvbls0d5n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter ... See More ⇒

 8.2. Size:396K  onsemi
 nvbls0d7n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.75 mW, 470 A NVBLS0D7N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH... See More ⇒

 8.3. Size:481K  onsemi
 nvbls0d7n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D7N04M8 MOSFET Power, Single, N-Channel 40 V, 240 A, 0.75 mW Features www.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter ... See More ⇒

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Detailed specifications: NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC, NVBGS6D5N15MC, 10N65, NVBLS0D5N04M8, NVBLS0D7N04M8, NVBLS0D7N06C, NVBLS1D1N08H, NVBLS4D0N15MC, NVC3S5A51PLZ, NVD5C446N, NVD5C454N

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