All MOSFET. NVBLS001N06C Datasheet

 

NVBLS001N06C Datasheet and Replacement


   Type Designator: NVBLS001N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 284 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 422 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 143 nC
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 5973 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: H-PSOF8L
 

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NVBLS001N06C Datasheet (PDF)

 ..1. Size:394K  onsemi
nvbls001n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.1. Size:490K  onsemi
nvbls0d5n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

 8.2. Size:396K  onsemi
nvbls0d7n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANVBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

 8.3. Size:481K  onsemi
nvbls0d7n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D7N04M8MOSFET Power, Single,N-Channel40 V, 240 A, 0.75 mWFeatureswww.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

Datasheet: NVBF170L , NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , NVBG160N120SC1 , NVBGS4D1N15MC , NVBGS6D5N15MC , STP80NF70 , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC , NVC3S5A51PLZ , NVD5C446N , NVD5C454N .

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