NVBLS001N06C. Аналоги и основные параметры

Наименование производителя: NVBLS001N06C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 284 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 422 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 53 ns

Cossⓘ - Выходная емкость: 5973 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm

Тип корпуса: H-PSOF8L

Аналог (замена) для NVBLS001N06C

- подборⓘ MOSFET транзистора по параметрам

 

NVBLS001N06C даташит

 ..1. Size:394K  onsemi
 nvbls001n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.1. Size:490K  onsemi
 nvbls0d5n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

 8.2. Size:396K  onsemi
 nvbls0d7n06c.pdf pdf_icon

NVBLS001N06C

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.75 mW, 470 A NVBLS0D7N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

 8.3. Size:481K  onsemi
 nvbls0d7n04m8.pdf pdf_icon

NVBLS001N06C

NVBLS0D7N04M8 MOSFET Power, Single, N-Channel 40 V, 240 A, 0.75 mW Features www.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

ПОКАЗАТЬ ЕЩЁ

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