NVBLS001N06C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVBLS001N06C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 284 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 422 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 143 nC
tr ⓘ - Время нарастания: 53 ns
Cossⓘ - Выходная емкость: 5973 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0009 Ohm
Тип корпуса: H-PSOF8L
Аналог (замена) для NVBLS001N06C
NVBLS001N06C Datasheet (PDF)
nvbls001n06c.pdf

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
nvbls0d5n04m8.pdf

NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter
nvbls0d7n06c.pdf

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANVBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH
nvbls0d7n04m8.pdf

NVBLS0D7N04M8MOSFET Power, Single,N-Channel40 V, 240 A, 0.75 mWFeatureswww.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter
Другие MOSFET... NVBF170L , NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , NVBG160N120SC1 , NVBGS4D1N15MC , NVBGS6D5N15MC , STP80NF70 , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC , NVC3S5A51PLZ , NVD5C446N , NVD5C454N .
History: NCEP0116K | ZXMP6A18DN8 | TK62J60W5 | VB8338 | IRF6709S2 | PSMN022-30BL
History: NCEP0116K | ZXMP6A18DN8 | TK62J60W5 | VB8338 | IRF6709S2 | PSMN022-30BL



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