NVD5C454N MOSFET. Datasheet pdf. Equivalent

NVD5C454NMOSFET Power, SingleN-Channel40 V, 4.2 mW, 83 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V 4.2 mW @ 10 V 83 ACompliantMAXIMUM RATINGS (TJ = 25C unless ot

NVD5C454NLMOSFET Power, Single,N-Channel,40 V, 3.9 mW, 88 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.9 mW @ 10 VCompliant40 V 88 A5.7 mW @ 4.5 VMAXIMUM RATINGS (

NVD5C446NMOSFET Power, SingleN-Channel40 V, 3.5 mW, 101 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V 3.5 mW @ 10 V 101 ACompliantMAXIMUM RATINGS (TJ = 25C unless

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

NVD5C688NLPower MOSFET60 V, 27.4 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID27.4 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise note

NVD5C668NLPower MOSFET60 V, 8.9 mW, 49 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

isc N-Channel MOSFET Transistor NVD5C648NLFEATURESDrain Current I = 89A@ T =25D CDrain Source Voltage-V = 60V(Min)DSSStatic Drain-Source On-ResistanceR :4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor NVD5C668NLFEATURESDrain Current : I = 49A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole