All MOSFET. NVMFD020N06C Datasheet

 

NVMFD020N06C Datasheet and Replacement


   Type Designator: NVMFD020N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1.4 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0203 Ohm
   Package: DFN8-5X6
 

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NVMFD020N06C Datasheet (PDF)

 ..1. Size:224K  onsemi
 nvmfd020n06c.pdf pdf_icon

NVMFD020N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1

 7.1. Size:229K  1
 nvmfd024n06ct1g.pdf pdf_icon

NVMFD020N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 7.2. Size:229K  onsemi
 nvmfd024n06c.pdf pdf_icon

NVMFD020N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 8.1. Size:163K  onsemi
 nvmfd016n06c.pdf pdf_icon

NVMFD020N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANVMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced OpticalInspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

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Datasheet: NVHL050N65S3HF , NVHL060N090SC1 , NVHL072N65S3 , NVHL080N120SC1 , NVHL080N120SC1A , NVHL082N65S3F , NVHL160N120SC1 , NVMFD016N06C , MMIS60R580P , NVMFD024N06C , NVMFD030N06C , NVMFD5853NWF , NVMFD5875NL , NVMFD5C446N , NVMFD5C446NL , NVMFD5C462N , NVMFD5C462NL .

Keywords - NVMFD020N06C MOSFET datasheet

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