Справочник MOSFET. NVMFD020N06C

 

NVMFD020N06C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVMFD020N06C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 1.4 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0203 Ohm
   Тип корпуса: DFN8-5X6

 Аналог (замена) для NVMFD020N06C

 

 

NVMFD020N06C Datasheet (PDF)

 ..1. Size:224K  onsemi
 nvmfd020n06c.pdf

NVMFD020N06C NVMFD020N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1

 7.1. Size:229K  1
 nvmfd024n06ct1g.pdf

NVMFD020N06C NVMFD020N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 7.2. Size:229K  onsemi
 nvmfd024n06c.pdf

NVMFD020N06C NVMFD020N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 8.1. Size:163K  onsemi
 nvmfd016n06c.pdf

NVMFD020N06C NVMFD020N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANVMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced OpticalInspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

 8.2. Size:227K  onsemi
 nvmfd030n06c.pdf

NVMFD020N06C NVMFD020N06C

MOSFET - Power, DualN-Channel, DUAL SO-8FL60 V, 29.7 mW, 19 ANVMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 29.7 mW @ 10 V 19 A AEC-Q

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