All MOSFET. NVMFD5875NL Datasheet

 

NVMFD5875NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVMFD5875NL
   Marking Code: 5875NL_5875LW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.9 nC
   trⓘ - Rise Time: 15.8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: DFN8-5X6

 NVMFD5875NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVMFD5875NL Datasheet (PDF)

 ..1. Size:201K  onsemi
 nvmfd5875nl.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5875NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 33 mW, 22 Awww.onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical60 V 22 A45 mW @ 4.5 VInspection AEC-Q101 Qualified and PPAP Capabl

 6.1. Size:199K  onsemi
 nvmfd5877nl.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5877NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 39 mW, 17 Ahttp://onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical60 V 17 AInspection60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

 6.2. Size:76K  onsemi
 nvmfd5873nl.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5873NLPower MOSFET60 V, 13 mW, 58 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical13 mW @ 10 VInspection60 V 58 A16.5

 7.1. Size:120K  onsemi
 nvmfd5853n.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5853N,NVMFD5853NWFPower MOSFET40 V, 10 mW, 53 A, Dual N-Channel, DualSO-8FLFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

 7.2. Size:202K  onsemi
 nvmfd5853n nvmfd5853nwf.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5853N,NVMFD5853NWFMOSFET Dual N-Channel,Dual SO-8FL40 V, 10 mW, 53 Ahttp://onsemi.comFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

 7.3. Size:78K  onsemi
 nvmfd5852nl.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5852NLPower MOSFET40 V, 6.9 mW, 44 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical6.9 mW @ 10 VInspection40 V 44 A

 7.4. Size:75K  onsemi
 nvmfd5853nl.pdf

NVMFD5875NL NVMFD5875NL

NVMFD5853NLPower MOSFET40 V, 10 mW, 34 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical10 mW @ 10 VInspection40 V 34 A A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHD6N62E

 

 
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