NVMFS6H852N MOSFET: N-Ch, 80V, 40A. Full datasheet with pinout, specifications and replacement transistor list

NVMFS6H852N Datasheet (PDF)

..1. Size:178K onsemi
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MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie

0.1. Size:178K onsemi
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MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali

5.1. Size:174K onsemi
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MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali

5.2. Size:178K onsemi
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MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie

Datasheet: NVMFS6H818N , NVMFS6H818NL , NVMFS6H824N , NVMFS6H824NL , NVMFS6H836N , NVMFS6H836NL , NVMFS6H848N , NVMFS6H848NL , IRF520 , NVMFS6H852NL , NVMFS6H858N , NVMFS6H858NL , NVMFS6H864N , NVMFS6H864NL , NVMTS0D4N04CL , NVMTS0D6N04C , NVMTS0D7N04C .