NVMFS6H858N Specs and Replacement

Type Designator: NVMFS6H858N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0207 Ohm

Package: DFN5

NVMFS6H858N substitution

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NVMFS6H858N datasheet

 ..1. Size:178K  onsemi
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NVMFS6H858N

MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NVMFS6H858N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie... See More ⇒

 0.1. Size:174K  onsemi
 nvmfs6h858nl.pdf pdf_icon

NVMFS6H858N

MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A NVMFS6H858NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced Optical Inspection 19.5 mW @ 10 V 80 V 30 A AEC-Q101 Quali... See More ⇒

 5.1. Size:178K  onsemi
 nvmfs6h852n.pdf pdf_icon

NVMFS6H858N

MOSFET - Power, Single N-Channel 80 V, 14.2 mW, 43 A NVMFS6H852N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie... See More ⇒

 5.2. Size:178K  onsemi
 nvmfs6h852nl.pdf pdf_icon

NVMFS6H858N

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NVMFS6H852NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced Optical Inspection 13.1 mW @ 10 V 80 V 42 A AEC-Q101 Quali... See More ⇒

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Detailed specifications: NVMFS6H824N, NVMFS6H824NL, NVMFS6H836N, NVMFS6H836NL, NVMFS6H848N, NVMFS6H848NL, NVMFS6H852N, NVMFS6H852NL, STF13NM60N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL, NVMTS0D6N04C, NVMTS0D7N04C, NVMTS0D7N04CL, NVMTS0D7N06CL

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.