All MOSFET. NVMYS4D6N04CL Datasheet

 

NVMYS4D6N04CL Datasheet and Replacement


   Type Designator: NVMYS4D6N04CL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: LFPAK4
 

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NVMYS4D6N04CL Datasheet (PDF)

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NVMYS4D6N04CL

NVMYS4D6N04CLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard4.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 78 A7.2 mW @ 4.5 V

Datasheet: NVMFS6H858NL , NVMFS6H864N , NVMFS6H864NL , NVMTS0D4N04CL , NVMTS0D6N04C , NVMTS0D7N04C , NVMTS0D7N04CL , NVMTS0D7N06CL , NCEP15T14 , NVR5124PL , NVTFS002N04C , NVTFS002N04CL , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , NVTFS010N10MCL .

History: AM20N06-90D | SI7923DN | IXTJ3N150 | AUIRFP4227 | SSM3K56CT | FQD3N60TM | VBZE04N03

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