NVMYS4D6N04CL Specs and Replacement

Type Designator: NVMYS4D6N04CL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: LFPAK4

NVMYS4D6N04CL substitution

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NVMYS4D6N04CL datasheet

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NVMYS4D6N04CL

NVMYS4D6N04CL MOSFET Power, Single N-Channel 40 V, 4.5 mW, 78 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard 4.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 78 A 7.2 mW @ 4.5 V... See More ⇒

Detailed specifications: NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL, NVMTS0D6N04C, NVMTS0D7N04C, NVMTS0D7N04CL, NVMTS0D7N06CL, IRF1405, NVR5124PL, NVTFS002N04C, NVTFS002N04CL, NVTFS003N04C, NVTFS004N04C, NVTFS005N04C, NVTFS008N04C, NVTFS010N10MCL

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