NVMYS4D6N04CL MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMYS4D6N04CL
Marking Code: 4D6N04CL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 78 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 530 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: LFPAK4
NVMYS4D6N04CL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMYS4D6N04CL Datasheet (PDF)
..1. Size:332K onsemi
nvmys4d6n04cl.pdf
nvmys4d6n04cl.pdf
NVMYS4D6N04CLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard4.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 78 A7.2 mW @ 4.5 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
