All MOSFET. NVR5124PL Datasheet

 

NVR5124PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVR5124PL
   Marking Code: V24*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.3 nC
   trⓘ - Rise Time: 10.6 nS
   Cossⓘ - Output Capacitance: 27.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT-23

 NVR5124PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVR5124PL Datasheet (PDF)

 ..1. Size:123K  onsemi
 nvr5124pl.pdf

NVR5124PL NVR5124PL

NVR5124PLMOSFET Power, SingleP-Channel, SOT-23-60 V, -1.1 A, 230 mWFeatures Trench Technologywww.onsemi.com NVR Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(on) MAX ID MAXQualified and PPAP Capable230 mW @ -10 V These Devices are Pb-Free and are RoHS Compliant-60 V -1.1 A365 mW @

 9.1. Size:121K  onsemi
 nvr5198nl.pdf

NVR5124PL NVR5124PL

NVR5198NLPower MOSFET60 V, 155 mW, Single N-Channel LogicLevel, SOT-23Features Small Footprint Industry Standard Surface Mount SOT-23 Packagehttp://onsemi.com Low RDS(on) for Low Conduction Losses and Improved Efficiency AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS155 mW @ 10 VCom

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History: SI4N60-TN3-R | AOLF66910 | FTA04N60B | MDP1922TH | FSS273 | FDU8880 | 2N7002-7

 

 
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