NVR5124PL Datasheet and Replacement
Type Designator: NVR5124PL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.6 nS
Cossⓘ - Output Capacitance: 27.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: SOT-23
NVR5124PL substitution
NVR5124PL Datasheet (PDF)
nvr5124pl.pdf

NVR5124PLMOSFET Power, SingleP-Channel, SOT-23-60 V, -1.1 A, 230 mWFeatures Trench Technologywww.onsemi.com NVR Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(on) MAX ID MAXQualified and PPAP Capable230 mW @ -10 V These Devices are Pb-Free and are RoHS Compliant-60 V -1.1 A365 mW @
nvr5198nl.pdf

NVR5198NLPower MOSFET60 V, 155 mW, Single N-Channel LogicLevel, SOT-23Features Small Footprint Industry Standard Surface Mount SOT-23 Packagehttp://onsemi.com Low RDS(on) for Low Conduction Losses and Improved Efficiency AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS155 mW @ 10 VCom
Datasheet: NVMFS6H864N , NVMFS6H864NL , NVMTS0D4N04CL , NVMTS0D6N04C , NVMTS0D7N04C , NVMTS0D7N04CL , NVMTS0D7N06CL , NVMYS4D6N04CL , MMIS60R580P , NVTFS002N04C , NVTFS002N04CL , NVTFS003N04C , NVTFS004N04C , NVTFS005N04C , NVTFS008N04C , NVTFS010N10MCL , NVTFS014P04M8L .
History: STN1NF10 | AMPCW120R40CU | QM2518C1 | HGB480N15M | STB24N65M2 | FMV16N60ES | AM7365P
Keywords - NVR5124PL MOSFET datasheet
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History: STN1NF10 | AMPCW120R40CU | QM2518C1 | HGB480N15M | STB24N65M2 | FMV16N60ES | AM7365P



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