STV10NA40 Datasheet. Specs and Replacement

Type Designator: STV10NA40  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: SO10

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STV10NA40 datasheet

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STV10NA40

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Detailed specifications: STP7NA60, STP7NA60FI, STP8N50XI, STP8NA50, STP8NA50FI, STP9N30, STP9NA50, STP9NA50FI, 20N50, STV12N20, STV18N20, STV33N10, STV36N06, STV3NA80, STV40N05, STV40N10, STV4N100

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