STV10NA40 Spec and Replacement
Type Designator: STV10NA40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: SO10
STV10NA40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STV10NA40 Specs
Detailed specifications: STP7NA60 , STP7NA60FI , STP8N50XI , STP8NA50 , STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , 20N50 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , STV40N10 , STV4N100 .
Keywords - STV10NA40 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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