NVTFS6H880N PDF and Equivalents Search

 

NVTFS6H880N PDF Specs and Replacement


   Type Designator: NVTFS6H880N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: WDFN8
 

 NVTFS6H880N substitution

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NVTFS6H880N PDF Specs

 ..1. Size:198K  onsemi
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NVTFS6H880N

MOSFET - Power, Single N-Channel 80 V, 32 mW, 22 A NVTFS6H880N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 32 mW @ 10 V 22 A These Device... See More ⇒

 0.1. Size:265K  onsemi
 nvtfs6h880nl.pdf pdf_icon

NVTFS6H880N

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devi... See More ⇒

 5.1. Size:267K  onsemi
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NVTFS6H880N

MOSFET - Power, Single N-Channel 80 V, 50 mW, 14 A NVTFS6H888NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V 80 V 14 A These Dev... See More ⇒

 5.2. Size:202K  onsemi
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NVTFS6H880N

MOSFET - Power, Single N-Channel 80 V, 55 mW, 13 A NVTFS6H888N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 55 mW @ 10 V 13 A These Device... See More ⇒

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Detailed specifications: NVTFS5C673NL , NVTFS5C680NL , NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , IRFB4110 , NVTFS6H880NL , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , PJM07P20SA , PJM10H03NSC .

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