All MOSFET. NVTFS6H880N Datasheet

 

NVTFS6H880N MOSFET. Datasheet pdf. Equivalent

Type Designator: NVTFS6H880N

Marking Code: 880N_80NW

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 6.9 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: WDFN8

NVTFS6H880N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVTFS6H880N Datasheet (PDF)

0.1. nvtfs6h880nl.pdf Size:265K _onsemi

NVTFS6H880N
NVTFS6H880N

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi

0.2. nvtfs6h880n.pdf Size:198K _onsemi

NVTFS6H880N
NVTFS6H880N

MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device

 5.1. nvtfs6h888n.pdf Size:202K _onsemi

NVTFS6H880N
NVTFS6H880N

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device

5.2. nvtfs6h888nl.pdf Size:267K _onsemi

NVTFS6H880N
NVTFS6H880N

MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev

Datasheet: CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
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