NVTFS6H880N Datasheet. Specs and Replacement
Type Designator: NVTFS6H880N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: WDFN8
📄📄 Copy
NVTFS6H880N substitution
- MOSFET ⓘ Cross-Reference Search
NVTFS6H880N datasheet
nvtfs6h880n.pdf
MOSFET - Power, Single N-Channel 80 V, 32 mW, 22 A NVTFS6H880N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 32 mW @ 10 V 22 A These Device... See More ⇒
nvtfs6h880nl.pdf
MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devi... See More ⇒
nvtfs6h888nl.pdf
MOSFET - Power, Single N-Channel 80 V, 50 mW, 14 A NVTFS6H888NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V 80 V 14 A These Dev... See More ⇒
nvtfs6h888n.pdf
MOSFET - Power, Single N-Channel 80 V, 55 mW, 13 A NVTFS6H888N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 55 mW @ 10 V 13 A These Device... See More ⇒
Detailed specifications: NVTFS5C673NL, NVTFS5C680NL, NVTFS6H850N, NVTFS6H850NL, NVTFS6H854N, NVTFS6H854NL, NVTFS6H860N, NVTFS6H860NL, 2N7002, NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, PJM02N60SA, PJM07P20SA, PJM10H03NSC
Keywords - NVTFS6H880N MOSFET specs
NVTFS6H880N cross reference
NVTFS6H880N equivalent finder
NVTFS6H880N pdf lookup
NVTFS6H880N substitution
NVTFS6H880N replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
🌐 : EN ES РУ
LIST
Last Update
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D
Popular searches
go42n10 | 2sa970 datasheet | 2sc1627 | aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent
