All MOSFET. PJM2300NSA Datasheet

 

PJM2300NSA Datasheet and Replacement


   Type Designator: PJM2300NSA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT23
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PJM2300NSA Datasheet (PDF)

 ..1. Size:1608K  pjsemi
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PJM2300NSA

PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units

 0.1. Size:1200K  pjsemi
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PJM2300NSA

PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR

 8.1. Size:1074K  pjsemi
pjm2301psa-s.pdf pdf_icon

PJM2300NSA

PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s

 8.2. Size:2298K  pjsemi
pjm2305psa.pdf pdf_icon

PJM2300NSA

PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete

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History: TK2P60D | HY3403P | IRFBG20

Keywords - PJM2300NSA MOSFET datasheet

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