STV36N06 Specs and Replacement
Type Designator: STV36N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SO10
STV36N06 substitution
- MOSFET ⓘ Cross-Reference Search
STV36N06 datasheet
Detailed specifications: STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 , STV33N10 , IRFZ24N , STV3NA80 , STV40N05 , STV40N10 , STV4N100 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 .
Keywords - STV36N06 MOSFET specs
STV36N06 cross reference
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STV36N06 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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