All MOSFET. PJM3400NSA Datasheet

 

PJM3400NSA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJM3400NSA
   Marking Code: R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT23

 PJM3400NSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJM3400NSA Datasheet (PDF)

 ..1. Size:2260K  pjsemi
 pjm3400nsa.pdf

PJM3400NSA PJM3400NSA

PJM3400NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features VDS = 30V,ID = 5.8ARDS(ON)

 5.1. Size:3436K  pjsemi
 pjm3400nsc.pdf

PJM3400NSA PJM3400NSA

PJM3400NSCN- Enhancement Mode Field Effect TransistorSOT-23-3 Features VDS = 30V,ID = 5.8ARDS(ON)

 8.1. Size:3580K  pjsemi
 pjm3401psc.pdf

PJM3400NSA PJM3400NSA

PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu

 8.2. Size:2604K  pjsemi
 pjm3401psa.pdf

PJM3400NSA PJM3400NSA

PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint

 8.3. Size:1464K  pjsemi
 pjm3407psa.pdf

PJM3400NSA PJM3400NSA

PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1432

 

 
Back to Top