LSK3019FP8 Specs and Replacement
Type Designator: LSK3019FP8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: EMT3
LSK3019FP8 substitution
- MOSFET ⓘ Cross-Reference Search
LSK3019FP8 datasheet
Detailed specifications: PJM3400NSA, PJM3400NSC, PJM3401PSA, PJM3401PSC, PJM3407PSA, PJM3415PSA, PJM84PSA, EM6M2, SKD502T, LSK3541FS8, RD3P200SNFRA, RJU002N06, RK7002BMHZG, RQ3C150BC, RQ5E040TN, RQ5E050AT, RRR040P03FRA
Keywords - LSK3019FP8 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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