RD3P200SNFRA Datasheet and Replacement
Type Designator: RD3P200SNFRA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: DPAK
RD3P200SNFRA substitution
RD3P200SNFRA Datasheet (PDF)
rd3p200snfra.pdf

RD3P200SNFRADatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliant6) AEC-Q101 QualifiedlPackagi
rd3p200sn.pdf

RD3P200SNDatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo
rd3p200sn.pdf

isc N-Channel MOSFET Transistor RD3P200SNFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: PJM3401PSA , PJM3401PSC , PJM3407PSA , PJM3415PSA , PJM84PSA , EM6M2 , LSK3019FP8 , LSK3541FS8 , TK10A60D , RJU002N06 , RK7002BMHZG , RQ3C150BC , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 .
History: SI5485DU | NCEP048N72 | SSD3055 | KND3208A | WSF3087 | HSBA6214 | RU6050S
Keywords - RD3P200SNFRA MOSFET datasheet
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History: SI5485DU | NCEP048N72 | SSD3055 | KND3208A | WSF3087 | HSBA6214 | RU6050S



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