RD3P200SNFRA Datasheet and Replacement
Type Designator: RD3P200SNFRA
Marking Code: RD3P200SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: DPAK
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RD3P200SNFRA Datasheet (PDF)
rd3p200snfra.pdf

RD3P200SNFRADatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliant6) AEC-Q101 QualifiedlPackagi
rd3p200sn.pdf

RD3P200SNDatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo
rd3p200sn.pdf

isc N-Channel MOSFET Transistor RD3P200SNFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: TJ150F04M3L
Keywords - RD3P200SNFRA MOSFET datasheet
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History: TJ150F04M3L



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