RRR040P03FRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RRR040P03FRA
Marking Code: UG
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package: SOT-346T
RRR040P03FRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RRR040P03FRA
Datasheet (PDF)
..1. Size:2491K rohm
rrr040p03fra.pdf
RRR040P03FRADatasheetPch -30V -4A Small Signal MOSFETlOutlinel SOT-346TVDSS-30V SC-96RDS(on)(Max.)45m TSMT3ID4APD1.0W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S Protection Diode3) Small Surface Mount Package (TSMT3)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualified
5.1. Size:294K rohm
rrr040p03.pdf
4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) Space saving small surface mount package (TSMT3).(1) (2)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 3000
5.2. Size:867K cn vbsemi
rrr040p03tl.pdf
RRR040P03TLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
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