RTQ025P02
MOSFET. Datasheet pdf. Equivalent
Type Designator: RTQ025P02
Marking Code: TQ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.4
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TSMT6
RTQ025P02
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RTQ025P02
Datasheet (PDF)
..1. Size:94K rohm
rtq025p02.pdf 
RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units : mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe
0.1. Size:961K rohm
rtq025p02fra.pdf
RTQ025P02FRARTQ025P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ025P02FRARTQ025P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX Features 2.90.851.91) Low On-resistance.(140m at 2.5V) 0.95 0.95 0.7(6) (5) (4)2) High Power Package. 3) High speed switching. 0~0.1(1) (2) (3)4) Low voltage drive.(2.5V) 1pin
0.2. Size:94K rohm
rtq025p02tr.pdf
RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units : mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe
9.1. Size:217K rohm
rtq020n05.pdf
2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.71) Low On-resistance. (6) (5) (4)2) Space savingsmall surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions ApplicationsAbbreviated symbo
9.2. Size:55K rohm
rtq020n03.pdf
RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions
9.3. Size:1526K rohm
rtq020n05hzg.pdf
RTQ020N05HZGDatasheetNch 45V 2A Small Signal MOSFETlOutlinel SOT-457TVDSS45V SC-95RDS(on)(Max.)190m TSMT6ID2APD1.25W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S protection diode3) Small surface mount package(TSMT6)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualifiedl
9.4. Size:53K rohm
rtq020n03tr.pdf
RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions
9.5. Size:913K rohm
rtq020n03fra.pdf
RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark
9.6. Size:537K rohm
rtq020n05tr.pdf
RTQ020N05 Nch 45V 2A Power MOSFET DatasheetlOutline(6) VDSS45V(5) TSMT6(4) RDS(on) (Max.)190mW(1) ID2A(2) PD1.25W (3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E
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