RTQ025P02 - описание и поиск аналогов

RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(2.5V) Each lead has same dimensions Abbreviatedsymbol TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 External dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX Features 2.9 0.85 1.9 1) Low On-resistance.(140m at 2.5V) 0.95 0.95 0.7 (6) (5) (4) 2) High Power Package. 3) High speed switching. 0 0.1 (1) (2) (3) 4) Low voltage drive.(2.5V) 1pin

RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(2.5V) Each lead has same dimensions Abbreviatedsymbol TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 1) Low On-resistance. (6) (5) (4) 2) Space saving small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbo

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

RTQ020N05HZG Datasheet Nch 45V 2A Small Signal MOSFET lOutline l SOT-457T VDSS 45V SC-95 RDS(on)(Max.) 190m TSMT6 ID 2A PD 1.25W lInner circuit l lFeatures l 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified l

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

RTQ020N03 RTQ020N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ020N03FRA RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark

RTQ020N05 Nch 45V 2A Power MOSFET Datasheet lOutline (6) VDSS 45V (5) TSMT6 (4) RDS(on) (Max.) 190mW (1) ID 2A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E