Справочник MOSFET. RTQ025P02

 

RTQ025P02 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RTQ025P02
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TSMT6

 Аналог (замена) для RTQ025P02

 

 

RTQ025P02 Datasheet (PDF)

 ..1. Size:94K  rohm
 rtq025p02.pdf

RTQ025P02 RTQ025P02

RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units : mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

 0.1. Size:961K  rohm
 rtq025p02fra.pdf

RTQ025P02 RTQ025P02

RTQ025P02FRARTQ025P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ025P02FRARTQ025P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX Features 2.90.851.91) Low On-resistance.(140m at 2.5V) 0.95 0.95 0.7(6) (5) (4)2) High Power Package. 3) High speed switching. 0~0.1(1) (2) (3)4) Low voltage drive.(2.5V) 1pin

 0.2. Size:94K  rohm
 rtq025p02tr.pdf

RTQ025P02 RTQ025P02

RTQ025P02 Transistor DC-DC Converter (-20V, -2.5A) RTQ025P02 External dimensions (Units : mm) Features 1) Low On-resistance.(140m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TQ Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

 9.1. Size:217K  rohm
 rtq020n05.pdf

RTQ025P02 RTQ025P02

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.71) Low On-resistance. (6) (5) (4)2) Space savingsmall surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions ApplicationsAbbreviated symbo

 9.2. Size:55K  rohm
 rtq020n03.pdf

RTQ025P02 RTQ025P02

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 9.3. Size:1526K  rohm
 rtq020n05hzg.pdf

RTQ025P02 RTQ025P02

RTQ020N05HZGDatasheetNch 45V 2A Small Signal MOSFETlOutlinel SOT-457TVDSS45V SC-95RDS(on)(Max.)190m TSMT6ID2APD1.25W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S protection diode3) Small surface mount package(TSMT6)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualifiedl

 9.4. Size:53K  rohm
 rtq020n03tr.pdf

RTQ025P02 RTQ025P02

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 9.5. Size:913K  rohm
 rtq020n03fra.pdf

RTQ025P02 RTQ025P02

RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark

 9.6. Size:537K  rohm
 rtq020n05tr.pdf

RTQ025P02 RTQ025P02

RTQ020N05 Nch 45V 2A Power MOSFET DatasheetlOutline(6) VDSS45V(5) TSMT6(4) RDS(on) (Max.)190mW(1) ID2A(2) PD1.25W (3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E

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